Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
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金属有机气相外延在 GaAs(100) 衬底上生长立方氮化镓的光致发光特性
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
Y. Shiraki
中科院分区：
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作者：
J. Wu;H. Yaguchi;K. Onabe;R. Ito;Y. Shiraki
利用金属有机物气相外延技术在GaAs（100）衬底上生长了立方GaN薄膜，并对其进行了光致发光（PL）测量。立方GaN薄膜显示出高的光学质量，使我们能够详细研究PL光谱。从温度和激发强度的依赖性，在3.274和3.178 eV的发射线被分配到激子跃迁和施主-受主对跃迁，分别。我们还观察到两个额外的发射线在3.088和3.056 eV。在300 K下观察到3.216 eV的激子发射，半峰全宽为73 meV。
Photoluminescence (PL) measurements were performed on cubic GaN films grown on GaAs(100) substrates by metalorganic vapor phase epitaxy. The cubic GaN films show a high optical quality that enables us to study the PL spectra in detail. From temperature and excitation intensity dependence, the emission lines at 3.274 and at 3.178 eV were assigned to the excitonic transition and the donor–acceptor pair transition, respectively. We also observed two additional emission lines at 3.088 and 3.056 eV. An excitonic emission at 3.216 eV with full width half maximum value as small as 73 meV was observed at 300 K.