Effect of Rare-earth Variable-valence Element Eu doping on Thermoelectric Property of BiCuSeO
Effect of Rare-earth Variable-valence Element Eu doping on Thermoelectric Property of BiCuSeO
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DOI:
10.15541/jim20190570
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发表时间:
2020
影响因子:
1.7
通讯作者:
Huijun Kang;Xiaoying Zhang;Yanxia Wang;Jianbo Li;Yang Xiong;Daquan Liu;Zerong Yang;Tongmin Wang
中科院分区:
文献类型:
--
作者:
Huijun Kang;Xiaoying Zhang;Yanxia Wang;Jianbo Li;Yang Xiong;Daquan Liu;Zerong Yang;Tongmin Wang
: As a new promising thermoelectrical material in the range of intermediate temperature, BiCuSeO attracts much attention due to the combination of low intrinsic thermal conductivity and relatively high Seebeck coefficient. In this study the effects of substituting variable-valence rare-earth element Eu for Bi site on the microstructure and thermoelectric performance of BiCuSeO-based material were investigated. The results indicate that ions of two valence states, Eu 2+ and Eu 3+ , coexist in the doped BiCuSeO samples. The doping of Eu not only improves the concentration of the carriers, but also modifies the band structure of BiCuSeO matrix, resulting in effective improvement of electrical transport properties. The electrical conductivity of Bi 0.85 Eu 0.15 CuSeO reaches 98 S∙cm -1 at 823 K, which is 6 times as high as that of the undoped sample. The power factor of 0.32 mW∙m -1 ∙K -2 and ZT of 0.49 can be achieved at 823 K for Bi 0.975 Eu 0.025 CuSeO sample. This study shows that the doping of variable-valence rare-earth elements can improve the thermoelectric properties of materials.