Fabrication of antiferroelectric NaNbO3-CaSnO3 film by pulsed laser deposition
Fabrication of antiferroelectric NaNbO3-CaSnO3 film by pulsed laser deposition
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DOI：
10.35848/1347-4065/ac0ed2
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发表时间：
2021
影响因子：
1.5
通讯作者：
Kosuke Beppu;Fumiya Funatomi;H. Adachi;T. Wada
中科院分区：
文献类型：
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作者：
Kosuke Beppu;Fumiya Funatomi;H. Adachi;T. Wada
在本研究中，我们采用脉冲激光沉积的方法在(001)SrTiO_3单晶衬底上制备了0.98NaNbO_3-0.02CaSnO_3薄膜。在NaNbO_3中合金化少量CaSnO_3稳定了NaNbO_3的反铁电相。0.98NaNbO_3-0.02CaSnO_3薄膜中稳定的反铁电相沿面内和面外两个方向生长。这两种类型的反铁电畴有助于反铁电相在较大电场下的稳定。0.98NaNbO_3-0.02CaSnO_3薄膜在180℃的高温下仍表现出反铁电双重P-E响应，其储能密度(Wr)为1.7J cm−3，储能效率(η)为52%。
In this study, we fabricated a 0.98NaNbO3-0.02CaSnO3 film on SrRuO3 coated (001)SrTiO3 single crystal substrate by pulsed laser deposition. A tiny amount of CaSnO3 alloying into NaNbO3 stabilized the antiferroelectric phase of NaNbO3. The c-axis of stabilized antiferroelectric phase in the 0.98NaNbO3-0.02CaSnO3 film grew along two directions of the in-plane and out-of-plane directions. These two types of antiferroelectric domains contributed to the stabilization of the antiferroelectric phase under a large applied electric field. The 0.98NaNbO3-0.02CaSnO3 film showed antiferroelectric double P–E response even at a high temperature of 180 °C and had energy storage property of recoverable energy storage density (W r) of 1.7 J cm−3 and storage efficiency (η) of 52%.