Effect of Cr doping on the optical-electrical property of CuAlO2 thin films derived by chemical solution deposition
Effect of Cr doping on the optical-electrical property of CuAlO2 thin films derived by chemical solution deposition
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DOI：
10.1016/j.tsf.2010.12.025
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发表时间：
2011-02-01
期刊：
影响因子：
2.1
通讯作者：
Fu, Y. K.
中科院分区：
文献类型：
--
作者：
Jiang, H. F.;Zhu, X. B.;Fu, Y. K.
采用化学溶液沉积法在蓝宝石衬底上制备了掺铬的CuAlO2薄膜。利用X射线衍射仪在掠入射模式下确定了CuAl1-xCrxO2(x=0-0.015)薄膜的多晶相结构。所有的样品都是相纯的。光电性能测试表明，随着铬含量的增加，薄膜的电阻率从x=0.015减小到0.01后增大。这意味着两种影响电导率的机制共存并相互竞争。随着铬含量的增加，这些机制的优势也发生了变化。对紫外区透过率的详细研究表明，由于Cr3d态对价带顶的贡献，掺铬可以改变价带顶的结构。在透明导电氧化物薄膜中掺入1%的铬可以实现最佳的光电性能。(C)2010年爱思唯尔。版权所有
Cr-doped CuAlO2 thin films were deposited on sapphire substrates by chemical solution deposition. The polycrystalline phase structure of CuAl1-xCrxO2 (x = 0-0.015) thin films was confirmed using an X-ray diffractometer in grazing incidence mode. All specimens are phase-pure. Optical-electrical property measurements show that with increasing Cr amount, electrical resistivity decreases from x = 0 to 0.01, followed by an increase of x = 0.015. This implies that two mechanisms affecting conductivity coexist and compete with each other. The predominance of the mechanisms changes with the increase in the Cr content. The detailed investigation on the transmittance in the ultraviolet region suggests that Cr doping can modify the structure of the top of valence band (VB) because Cr 3d states contribute to VB. Finally, 1% Cr doping can realize the best optimization of optical-electrical property with respect to transparent conducting oxide thin films. (C) 2010 Elsevier By. All rights reserved