High-resolution Compton cameras based on Si/CdTe double-sided strip detectors
High-resolution Compton cameras based on Si/CdTe double-sided strip detectors
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DOI：
10.1016/j.nima.2011.12.061
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发表时间：
2012-12-11
影响因子：
1.4
通讯作者：
Fukazawa, Yasushi
中科院分区：
文献类型：
--
作者：
Odaka, Hirokazu;Ichinohe, Yuto;Fukazawa, Yasushi
我们开发了一种基于硅（Si）和碲化镉（CdTe）半导体双面带探测器（dsd）的新型康普顿相机。摄像机由一层500 μ m厚的Si-DSD和四层750 μ m厚的cdte - dsd组成，这些dsd具有共同的电极结构，每侧分割成128条，间距为250 μ m。为了实现高角度分辨率并减小探测器系统的尺寸，使用了一层短间距为4 mm的dsd堆叠来制作摄像机。利用半导体器件优异的能量和位置分辨率，相机在356键下达到4.5度，在662键下达到3.5度的高角分辨率。为了获得如此高的分辨率和可接受的检测效率，我们展示了数据缩减方法，包括在CdTe-DSD中使用康普顿散射连续体和深度传感进行能量校准。我们还讨论了相机的成像能力，并展示了同时多能成像。(C) 2012 Elsevier B.V.版权所有
We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-mu m-thick Si-DSD and four layers of 750-mu m-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250 mu m. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5 degrees at 356 key and 3.5 degrees at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging. (C) 2012 Elsevier B.V. All rights reserved.