Super Barrier Rectifier - A New Generation of Power Diode
Super Barrier Rectifier - A New Generation of Power Diode
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DOI：
10.1109/tia.2007.912752
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发表时间：
2007-05
期刊：
影响因子：
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通讯作者：
V. Rodov;A. Ankoudinov;T. Taufik
中科院分区：
文献类型：
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作者：
V. Rodov;A. Ankoudinov;T. Taufik
新的超级势垒整流器（SBR）方法背后的主要原理是为大多数载流子创建“超级”势垒，而没有不可靠的金属-半导体肖特基接触。SBR技术在MOS沟道中产生这样的势垒。该势垒的高度可以通过沟道中的掺杂浓度容易地调节。本文论证了新型功率二极管联合收割机在低压应用（100 V以下）中具有高性能和高可靠性。的基本概念和操作分析，以及实验室测试结果，比较肖特基和新的SBR二极管之间的性能和可靠性。
The main principle behind the new Super Barrier Rectifier (SBR) approach is to create the "Super" barrier for majority carriers without unreliable metal-semiconductor Schottky contact. SBR technology creates such barrier in the MOS channel. The height of this barrier can be easily adjusted by the doping concentration in the channel. This paper demonstrates that the new power diodes combine high performance and high reliability for low voltage applications (below 100V). The underlying concepts and analysis of operation are presented as well as the lab test results that compare performance and reliability between Schottky and the new SBR diode.