Dynamic Behavior of Tungsten Surfaces due to Simultaneous Impact of Hydrogen and Carbon Ion Beam
Dynamic Behavior of Tungsten Surfaces due to Simultaneous Impact of Hydrogen and Carbon Ion Beam
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DOI：
10.1143/jjap.42.7529
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发表时间：
2003-12
影响因子：
1.5
通讯作者：
Retsuo Kawakami;T. Shimada;Y. Ueda;M. Nishikawa
中科院分区：
文献类型：
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作者：
Retsuo Kawakami;T. Shimada;Y. Ueda;M. Nishikawa
利用离子-固体相互作用模拟程序EDDY，研究了H+和C+杂质同时辐照W表面的动力学行为。该程序模拟了溅射腐蚀和杂质沉积导致的辐照表面C和W之间成分变化的注量演化。结果已被描述在辐照中的C杂质浓度。它已与离子束辐照装置获得的实验数据进行了比较。特别地，C杂质浓度在W表面处的侵蚀/沉积中具有重要作用。随着C杂质浓度的增加，侵蚀增强。当C杂质浓度超过3.00%时，由于在W表面上形成C膜，存在从侵蚀到沉积的转变。对于腐蚀转变为沉积的结果，模拟定性地再现了X射线光电子能谱（XPS）测量的实验结果。对于不同的C杂质浓度，注量依赖性有不同的趋势。对于C：0.11%，侵蚀速率随着注量的增加而增加。这是由于在沉积的C的深度分布中在大约20 nm深度处的局部峰的生长。生长结果与实验结果吻合较好，表明由于H和C杂质的协同作用，反冲注入沉积的C对生长有很强的贡献。对于C：0.84%，在侵蚀速率和深度剖面上几乎有与C：0.11%相同的趋势。然而，在约10 nm的深度处的局部峰的生长与测量的峰不一致，其发生在表面附近。这种分歧似乎是由于表面偏析的贡献。
By using a simulation code for ion-solid interactions, EDDY, the dynamical behavior of W surfaces irradiated simultaneously with H+ and C+ impurity has been studied. This code models the fluence evolution of composition changes between C and W at the irradiated surface, which results from sputtering erosion and impurity deposition. The result has been described in terms of C impurity concentration in the irradiation. It has been compared with experimental data obtained by an ion beam irradiation device. In particular, the C impurity concentration has an important role in erosion/deposition at the W surface. As the C impurity concentration increases, the erosion is enhanced. As the C impurity concentration exceeds 3.00%, there is a transition from erosion to deposition which is due to the formation of a C film on the W surface. Regarding the result that the erosion changes to deposition, the simulation qualitatively reproduces the experimental results measured by X-ray photoemission spectroscopy (XPS). There is a different tendency in the fluence dependence for the different C impurity concentrations. For C:0.11%, the erosion rate increases with increasing fluence. This results from a growth of a local peak at around a depth of 20 nm in the depth profile of the deposited C. The growth is in good agreement with the experimental result, which shows that there is a strong contribution from recoil implantation of the deposited C due to a synergetic effect of the H and C impurity. For C:0.84%, there are almost the same tendencies as for C:0.11% in the erosion rate and in the depth profile. However, the growth of the local peak at around a depth of 10 nm is in disagreement with the measured one, which occurs near the surface. The disagreement appears to be attributable to the contribution of the surface segregation.