Effect of different migration energy for reaction atoms on growth orientation and optical absorption characteristics of cubic MgZnO thin films under different pressure by PLD method
Effect of different migration energy for reaction atoms on growth orientation and optical absorption characteristics of cubic MgZnO thin films under different pressure by PLD method
复制标题
PLD法研究不同压力下反应原子不同迁移能对立方MgZnO薄膜生长取向和光吸收特性的影响
DOI：
10.1016/j.jcrysgro.2014.09.023
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发表时间：
2014-12-15
影响因子：
1.8
通讯作者：
Ma, Xiaocui
中科院分区：
文献类型：
--
作者：
Han, Shun;Shao, Yukun;Ma, Xiaocui
在不同的Ar/O-2流量比的条件下，在不同的气压下制备了Mg 1-xZnxO薄膜。随着生长压强的增加，MgZnO薄膜的生长取向由（200）向（111）转变，这是由于MgZnO靶材中活性Mg、Zn和O原子的迁移能降低所致。随着生长气压从2 Pa增加到6 Pa，MgZnO薄膜的禁带宽度减小，这是由于在较高气压下生长的MgZnO薄膜中，更多的Zn原子与（111）取向MgZnO晶格中的O原子结合。但当生长气压从6 Pa增加到7 Pa时，MgZnO薄膜的带隙值增加，这是因为在较高的生长气压下，MgZnO晶格中的Zn原子比Mg原子少，O原子与MgZnO晶格中的（111）取向相同。(C)2014 Elsevier B. V.保留所有权利，
Mg1-xZnxO thin films were deposited under different pressures during the growth process, which is modulated by different Ar/O-2 flow ratio. When growth pressure increases, the growth orientation of MgZnO thin film changed from (200) to (111) because of the decrease in migration energy of reactive Mg, Zn and O atoms from MgZnO target material. The band gap of MgZnO thin films decreased when growth pressure increased from 2 Pa to 6 Pa, which is reason from more Zn atoms combined with O atoms in (111) orientation MgZnO crystal lattice in MgZnO thin film deposited at higher pressures. But when the growth pressure increased from 6 Pa to 7 Pa, the band gap value of MgZnO thin films increased because less Zn atoms than Mg atoms combined with O atoms in MgZnO crystal lattice at higher pressures with the same (111) orientation. (C) 2014 Elsevier B.V. All rights reserved,