Lattice Dynamic and Instability in Pentasilicene: A Light Single-Element Ferroelectric Material With High Curie Temperature
Lattice Dynamic and Instability in Pentasilicene: A Light Single-Element Ferroelectric Material With High Curie Temperature
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五硅烯中的晶格动力学和不稳定性：一种轻质单元素高居里铁电材料
DOI：
10.1103/physrevapplied.11.064063
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发表时间：
2019-06-26
影响因子：
4.6
通讯作者：
Jena, Puru
中科院分区：
文献类型：
--
作者：
Guo, Yaguang;Zhang, Cunzhi;Jena, Puru
对于硅基电子学中的应用，在纯硅的某些同素异形体中诱导自发极化将是有趣且重要的。然而，由于传统硅形式的对称性保护，分离正负电荷态很困难。这项研究表明，通过倾斜二维五硅烯片中的二聚体可以实现所需的硅结构$T$五硅烯，这不仅稳定了系统，而且导致了本征铁电性，居里温度高达1190 K。这种硅同素异形体在非易失性随机存取存储器中具有潜在的应用。
For applications in Si-based electronics, it would be interesting and significant to induce spontaneous polarization in some allotrope of pure Si. However, because of the symmetry protection in conventional Si forms, separating positive and negative charge states is difficult. This study shows that a desired Si structure, $T$ pentasilicene, can be realized by tilting the dimers in the two-dimensional pentasilicene sheet, which not only stabilizes the system but also leads to intrinsic ferroelectricity, with a high Curie temperature of 1190 K. This Si allotrope could have potential applications in nonvolatile random-access memory.