Structural and optical properties of La-doped BaSnO3 thin films grown by PLD
Structural and optical properties of La-doped BaSnO3 thin films grown by PLD
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DOI：
10.1016/j.jpcs.2014.07.024
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发表时间：
2015
影响因子：
4
通讯作者：
K. James;P. Krishnaprasad;K. Hasna;M. Jayaraj
中科院分区：
文献类型：
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作者：
K. James;P. Krishnaprasad;K. Hasna;M. Jayaraj
本研究采用激光烧蚀法在熔融石英表面制备了掺镧BaSnO 3粉末样品和薄膜，并对其结构和光学性质进行了研究。在5×10− 4 mbar的氧压下，在630 °C制备了晶格常数为0.417 nm，晶粒尺寸为21 nm的纯相BaSnO 3薄膜。BaSnO 3粉末样品和薄膜的带隙分别为3.36 eV和3.67 eV。La掺杂量在0~ 7at%时，BaSnO 3薄膜的电导率逐渐增大。最高的电导率，9 Scm-1，获得了7原子%的La掺杂的BaSnO 3。由Burstein-Moss（B-M）位移得到的载流子浓度与实验值基本一致，但La掺杂量为3at%和10at%的BaSnO 3薄膜的载流子浓度与实验值相差不大。
In this study the structural and optical properties of lanthanum-doped BaSnO3powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10−4mbar, phase pure BaSnO3films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO3doped with 0~7 at% of La. The highest conductivity, 9 Scm−1, was obtained for 7 at% La-doped BaSnO3. Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO3thin films.