Critical charge concepts for CMOS SRAMs
Critical charge concepts for CMOS SRAMs
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DOI：
10.1109/23.488777
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发表时间：
1995-12-01
影响因子：
1.8
通讯作者：
Sexton, FW
中科院分区：
文献类型：
--
作者：
Dodd, PE;Sexton, FW
使用三维混合模式模拟的外部电路负载的重离子引起的电荷收集响应的打击晶体管的戏剧性的效果进行说明。CMOS SRAM单元的模拟电荷收集和SEU特性表明，在某些情况下，在敏感节点处，从不会引起翻转的撞击收集的电荷比从引起翻转的撞击收集的电荷多。临界电荷的计算必须考虑收集电荷的时间，而不仅仅是收集电荷的总量。模型预测的入射线性能量转移需要引起不安同意CMOS SRAM的测量数据，没有参数调整。结果表明，在SRAM单粒子翻转（SEU）的真实器件模拟中，处理电路效应是绝对必要的。
The dramatic effects of external circuit loading on the heavy-ion-induced charge-collection response of a struck transistor are illustrated using three-dimensional mixed-mode simulations. Simulated charge-collection and SEU characteristics of a CMOS SRAM cell indicate that, in some cases, more charge can be collected at sensitive nodes from strikes that do not cause upset than from strikes that do cause upset. Computations of critical charge must take into account the time during which charge is collected, not simply the total amount of charge collected. Model predictions of the incident linear energy transfer required to cause upset agree well with measured data for CMOS SRAMs, without parameter adjustments. The results show the absolute necessity of treating circuit effects in any realistic device simulation of single-event upset (SEU) in SRAMs.