Resistance switching of copper doped MoOx films for nonvolatile memory applications
Resistance switching of copper doped MoOx films for nonvolatile memory applications
复制标题
DOI：
10.1063/1.2715002
复制
发表时间：
2007-03
影响因子：
4
通讯作者：
Dongsoo Lee;D. Seong;I. Jo;F. Xiang;R. Dong;Seokjoon Oh;H. Hwang
中科院分区：
文献类型：
--
作者：
Dongsoo Lee;D. Seong;I. Jo;F. Xiang;R. Dong;Seokjoon Oh;H. Hwang
研究了铜掺杂MoOx薄膜的非挥发性和可逆电阻开关特性。在直流电下观察到滞后型电阻开关。在交流电压脉冲下，观察到超过106个周期的可重复电阻开关。在85°C下，两种电阻状态可保持25h。作者证明了电阻开关可能与导电原子力显微镜的扩散电阻图像以及双对数图的非导电性导电证实的多丝断裂和产生密切相关。基于X射线光电子能谱分析，局部导电细丝可以通过从底部电极热扩散铜到MoOx膜中形成。
Nonvolatile and reversible resistance switching of copper doped MoOx film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 106cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25h at 85°C. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoOx film from the bottom electrode.