Optical, Structural, and Numerical Investigations of GaAs/AlGaAs Core-Multishell Nanowire Quantum Well Tubes
Optical, Structural, and Numerical Investigations of GaAs/AlGaAs Core-Multishell Nanowire Quantum Well Tubes
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DOI：
10.1021/nl304182j
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发表时间：
2013-03-01
期刊：
影响因子：
10.8
通讯作者：
Jagadish, Chennupati
中科院分区：
文献类型：
--
作者：
Fickenscher, Melodie;Shi, Teng;Jagadish, Chennupati
用光学光谱研究了镶嵌在GaAs核-多壳层纳米线的AlGaAs壳层内的纳米级薄量子阱管的电学性质。利用数值模拟对柱状和六角对称体系进行建模，我们通过对纳米线横截面进行像差校正的扫描电子显微镜，将这些电子性质与结构特征关联起来。这些管状量子阱在光致发光和光致发光激发测量中都表现出极高的量子效率和极低的亚微瓦激发功率。对受限本征态的数值计算表明，处于基态的电子和空穴被限制在沿纳米线长度延伸的六方结构的拐角处的一维极端局域化的细丝中。
The electronic properties of thin, nanometer scale GaAs quantum well tubes embedded inside the AlGaAs shell of a GaAs core-multishell nanowire are investigated using optical spectroscopies. Using numerical simulations to model cylindrically and hexagonally symmetric systems, we correlate these electronic properties with structural characterization by aberration-corrected scanning transmission electron microscopy of nanowire cross sections. These tubular quantum wells exhibit extremely high quantum efficiency and intense emission for extremely low submicrowatt excitation powers in both photoluminescence and photoluminescence excitation measurements. Numerical calculations of the confined eigenstates suggest that the electrons and holes in their ground states are confined to extremely localized one-dimensional filaments at the corners of the hexagonal structure which extend along the length of the nanowire.