Investigation of damage generation process by stress waves during femtosecond laser drilling of SiC
Investigation of damage generation process by stress waves during femtosecond laser drilling of SiC
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DOI：
10.1016/j.precisioneng.2021.08.006
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发表时间：
2021-08-12
影响因子：
3.6
通讯作者：
Sugita, Naohiko
中科院分区：
文献类型：
--
作者：
Hattori, Junya;Ito, Yusuke;Sugita, Naohiko
飞秒激光加工作为一种用于微加工碳化硅（SiC）的方法已经引起了极大的关注，碳化硅有望用于下一代功率半导体。然而，在SiC的飞秒激光加工过程中，在加工区域周围产生了大量的损伤。在这项研究中，高速现象在飞秒激光打孔碳化硅观察到高的时间和空间分辨率相结合的泵浦探测成像和高速相机。此外，应力波传播的模拟实验结果的基础上进行。基于实验和模拟结果，阐明了材料去除过程中产生的应力波对材料损伤的产生机理。本研究阐明的损伤产生机理将有助于发展损伤抑制方法和扩大SiC的工业应用。
Femtosecond laser processing has garnered significant attention as a method for micromachining silicon carbide (SiC), which is expected to be used in next-generation power semiconductors. However, a significant amount of damage is generated around the processing area during the femtosecond laser processing of SiC. In this study, high-speed phenomena during the femtosecond laser drilling of SiC are observed with high temporal and spatial resolutions by combining pump-probe imaging and a high-speed camera. In addition, a stress wave propagation simulation based on experimental results is conducted. Based on the experimental and simulation results, the mechanism of damage generation by the stress wave generated during material removal is elucidated. The damage generation mechanism elucidated in this study will facilitate the development of damage suppression methods and the expansion of industrial applications of SiC.