Growth and characterization of InP nanowires with InAsP insertions
Growth and characterization of InP nanowires with InAsP insertions
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DOI：
10.1021/nl070228l
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发表时间：
2007-06-01
期刊：
影响因子：
10.8
通讯作者：
Harmand, Jean-Christophe
中科院分区：
文献类型：
--
作者：
Tchernycheva, Maria;Cirlin, George E.;Harmand, Jean-Christophe
我们报告的制作金辅助分子束外延的InP纳米线嵌入InAsP插入。生长温度影响纳米线侧面的成核。因此，可以通过两个步骤来生长线：制造轴向异质结构（在420摄氏度下），然后用壳覆盖它（在390摄氏度下）。通过改变As与P的熔剂比，InAsP合金的组成可以在InAs0.35P0.65和InAs0.5P0.5之间变化。当壳存在时，InAsP片段显示出强的室温光致发光，其峰值波长可通过调节As含量从1.2 μ m调谐到1.55 μ m。如果轴向异质结构没有壳层，发光强度急剧降低。在隔离单根导线上进行的低温微光致发光显示出窄峰，线宽小至120 μ eV。
We report on the fabrication by Au-assisted molecular beam epitaxy of InP nanowires with embedded InAsP insertions. The growth temperature affects the nucleation on the nanowire lateral surface. It is therefore possible to grow the wires in two steps: to fabricate an axial heterostructure (at 420 degrees C), and then cover it by a shell (at 390 degrees C). The InAsP alloy composition could be varied between InAs0.35P0.65 and InAs0.5P0.5 by changing the As to P flux ratio. When a shell is present, the InAsP segments show strong room-temperature photoluminescence with a peak wavelength tunable from 1.2 to 1.55 mu m by adjusting the As content. If the axial heterostructure has no shell, luminescence intensity is drastically reduced. Low-temperature microphotoluminescence performed on isolated single wires shows narrow peaks with a line width as small as 120 mu eV.