100-GHz Transistors from Wafer-Scale Epitaxial Graphene
100-GHz Transistors from Wafer-Scale Epitaxial Graphene
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DOI：
10.1126/science.1184289
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发表时间：
2010-02-05
期刊：
影响因子：
56.9
通讯作者：
Avouris, Ph.
中科院分区：
文献类型：
--
作者：
Lin, Y. -M.;Dimitrakopoulos, C.;Avouris, Ph.
石墨烯的高载流子迁移率已被用于在高频下工作的场效应晶体管中。晶体管是在碳化硅晶片的硅表面上合成的外延石墨烯上制造的，对于240纳米的栅极长度实现了100千兆赫的截止频率。这些外延石墨烯晶体管的高频性能超过了相同栅极长度的最先进的硅晶体管。
The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.