Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes
Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes
复制标题
InGaN/GaN 多量子阱绿色发光二极管中的 Shockley-Read-Hall 复合和效率下降
DOI：
10.1088/0022-3727/49/14/145104
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发表时间：
2016
影响因子：
3.4
通讯作者：
Du Guotong
中科院分区：
文献类型：
--
作者：
Liu Wei;Zhao Degang;Jiang Desheng;Chen Ping;Liu Zongshun;Zhu Jianjun;Li Xiang;Liang Feng;Liu Jianping;Zhang Liqun;Yang Hui;Zhang Yuantao;Du Guotong
The influence of Shockley–Read–Hall (SRH) non-radiative recombination on efficiency droop is investigated for two similar InGaN/GaN multiple-quantum-well green light-emitting diodes (LEDs) with quite different luminescence efficiency. The high-efficiency diode exhibits a pronounced efficiency peak followed by a significant droop as injection current increases, while the low-efficiency sample shows a relatively small droop. Combining with the recombination rate equations, our analysis reveals that, in comparison with the high-efficiency sample, in the low-efficiency diode the injected carrier density in InGaN well layers is decreased at high currents due to the strong SRH process, leading to an apparently reduced droop. This may be a possible physical mechanism responsible for the linkage between the low efficiency and the small efficiency droop.
