High tunnel magnetoresistance in epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe tunnel junctions
High tunnel magnetoresistance in epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe tunnel junctions
复制标题
DOI：
10.1109/tmag.2005.854716
复制
发表时间：
2005-10-01
影响因子：
2.1
通讯作者：
Yamamoto, A
中科院分区：
文献类型：
--
作者：
Marukame, T;Kasahara, T;Yamamoto, A
我们使用钴基全heusler合金Co-2 Cr-0.6, Fe-0.4 Al （CCFA）薄膜和MgO隧道势垒制备了全外延磁隧道结（MTJs）。采用磁控溅射的方法在MgO缓冲MgO单晶衬底上沉积了用于下铁磁电极的CCFA薄膜，并通过电子束蒸发形成了MgO隧道势垒。微晶外延CCFA/MgO/CoFe MTJs在室温和55 K下的隧道磁阻比分别为42%和74%。
We have fabricated fully epitaxial magnetic tunnel junctions (MTJs) using a Co-based full-Heusler alloy Co-2 Cr-0.6, Fe-0.4 Al (CCFA) thin film and an MgO tunnel barrier. The CCFA thin film for the lower ferromagnetic electrode was deposited by magnetron sputtering on an MgO-buffered MgO single-crystal substrate, and the MgO tunnel barrier was formed by electron beam evaporation. The microfabricated epitaxial CCFA/MgO/CoFe MTJs showed high tunnel magnetoresistance ratios of 42% at room temperature and 74% at 55 K.