Demonstration of Multi-Channel Interference Widely Tunable Semiconductor Laser
Demonstration of Multi-Channel Interference Widely Tunable Semiconductor Laser
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DOI：
10.1109/lpt.2016.2624308
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发表时间：
2016-12
影响因子：
2.6
通讯作者：
Quanan Chen;Xiang Ma;Wei Sun;Ye Liu;Gonghai Liu;Gongyuan Zhao;Q. Lu;W. Guo
中科院分区：
文献类型：
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作者：
Quanan Chen;Xiang Ma;Wei Sun;Ye Liu;Gonghai Liu;Gongyuan Zhao;Q. Lu;W. Guo
在这封信中，我们报告了多通道干涉（MCI）宽可调半导体激光器的首次实验演示。 MCI激光器的模式选择是通过八个不等长臂臂的相长干涉来实现的。与基于分布式布拉格反射器的传统宽可调半导体激光器相比，MCI激光器的制造更加简单，制造公差较大。在 23 °C 的温度下，已证明了约 52.3 nm (1538.96-1591.26 nm) 的准连续调谐范围，整个调谐范围内的边模抑制比大于 44 dB（通常大于 48 dB）。
In this letter, we report the first experimental demonstration of the multi-channel interference (MCI) widely tunable semiconductor laser. Mode selection of the MCI laser is achieved by the constructive interference of eight arms with unequal length difference. Compared with conventional widely tunable semiconductor lasers based on distributed Bragg reflectors, fabrication of the MCI laser is simpler with large fabrication tolerances. A quasi-continuous tuning range of about 52.3 nm (1538.96-1591.26 nm) has been demonstrated at a temperature of 23 °C with side-mode suppression-ratios greater than 44 dB across the whole tuning range (typically greater than 48 dB).