van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
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DOI：
10.1021/nl204109t
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发表时间：
2012-03-01
期刊：
影响因子：
10.8
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Hong, Young Joon;Lee, Wi Hyoung;Fukui, Takashi
垂直集成在石墨烯薄膜上的半导体纳米线阵列为许多复杂的器件应用提供了显著的优势。我们报告了货车德瓦尔斯（VDW）外延的InAs纳米线垂直排列在石墨烯衬底上使用金属有机化学气相沉积。采用不同层数的石墨烯薄膜研究了InAs纳米线的生长方向与石墨烯衬底表面粗糙度之间的强相关性。值得注意的是，垂直排列良好的InAs纳米线阵列很容易获得单层石墨烯基板上具有足够强的VDW吸引力。这项研究提出了一个相当大的进展，对VDW异质外延无机纳米结构的化学气相沉积大面积石墨烯。更重要的是，这项工作证明了最薄的外延衬底材料，产生垂直纳米线阵列的VDW外延方法。
Semiconductor nanowire arrays integrated vertically on graphene films offer significant advantages for many sophisticated device applications. We report on van der Waals (VDW) epitaxy of InAs nanowires vertically aligned on graphene substrates using metal organic chemical vapor deposition. The strong correlation between the growth direction of InAs nanowires and surface roughness of graphene substrates was investigated using various graphene films with different numbers of stacked layers. Notably, vertically well-aligned InAs nanowire arrays were obtained easily on single-layer graphene substrates with sufficiently strong VDW attraction. This study presents a considerable advance toward the VDW heteroepitaxy of inorganic nanostructures on chemical vapor-deposited large-area graphenes. More importantly, this work demonstrates the thinnest epitaxial substrate material that yields vertical nanowire arrays by the VDW epitaxy method.