The Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrate
The Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrate
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DOI：
10.4028/www.scientific.net/msf.569.133
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发表时间：
2008-01
期刊：
影响因子：
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通讯作者：
Hojun Lee;Boumyoung Park;H. Lee;Sukhoon Jeong;H. Seo;Sukbae Joo;Haedo Jeong;H. Kim
中科院分区：
文献类型：
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作者：
Hojun Lee;Boumyoung Park;H. Lee;Sukhoon Jeong;H. Seo;Sukbae Joo;Haedo Jeong;H. Kim
碳化硅（SiC）是一种宽带隙半导体，正在开发用于高温、高功率和高频器件应用。为了在半导体衬底上制备SiC，许多研究人员对SiC抛光进行了研究。然而，由于SiC的高硬度和显著的化学惰性，其在外延生长之前的晶片制备面临许多挑战。光滑且无缺陷的衬底表面对于获得良好的外延层是重要的。因此，混合工艺，化学机械抛光（CMP）已被提出来实现epi-ready表面。在本文中，材料去除率（MRR）进行了研究，以认识多久的CMP过程中继续使用100 nm尺寸的金刚石机械抛光去除损伤层，作者试图找到机械因素，如压力，速度和磨料浓度的依赖性，使用单一磨料浆（SAS）。特别是，作者试图获得一个epi-ready表面与混合磨料浆料（MAS）。在MAS中添加25 nm尺寸的金刚石提供了机械和化学效应之间的强协同作用，从而导致低亚表面损伤。通过SAS和MAS的实验，发现化学效应（KOH基）是必要的，原子位机械去除是有效的去除MAS中的残留划痕。本文认为，SiC化学机械抛光的机理与相对较软的材料有很大的不同，以获得高质量的表面和MRR。
Silicon carbide (SiC) is a wide band gap semiconductor being developed for high temperature, high power, and high frequency device applications. For the manufacturing of SiC to semiconductor substrate, many researchers have studied on the subject of SiC polishing. However, SiC faces many challenges for wafer preparation prior to epitaxial growth due to its high hardness and remarkable chemical inertness. A smooth and defect free substrate surface is important for obtaining good epitaxial layers. Therefore, hybrid process, chemical mechanical polishing (CMP) has been proposed to achieve epi-ready surface. In this paper, the material removal rate (MRR) is investigated to recognize how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm sized diamond, and the authors tried to find the dependency of mechanical factors such as pressure, velocity and abrasive concentration using single abrasive slurry (SAS). Especially, the authors tried to get an epi-ready surface with mixed abrasive slurry (MAS). The addition of the 25nm sized diamond in MAS provided strong synergy between mechanical and chemical effects resulting in low subsurface damage. Through experiments with SAS and MAS, it was found that chemical effect (KOH based) was essential and atomic-bit mechanical removal was efficient to remove residual scratches in MAS. This paper concluded that SiC CMP mechanism was quite different from that of relatively soft material to achieve both of high quality surface and MRR.