Suppression of Andreev conductance in a topological insulator-superconductor nanostep junction
Suppression of Andreev conductance in a topological insulator-superconductor nanostep junction
复制标题
拓扑绝缘体-超导体纳米台阶结中安德烈夫电导的抑制
DOI:
10.1088/1674-1056/25/3/037301
复制
发表时间:
2016
影响因子:
1.7
通讯作者:
Li Yu-Xian
中科院分区:
文献类型:
--
作者:
Zheng Yi-Jie;Song Jun-Tao;Li Yu-Xian
When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI–TI–superconductor nanostep junction is investigated theoretically. Because of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy (ɛ) of an electron is larger than the superconductor gap (Δ), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when ɛ= 0, but decreasing for ɛ= Δ, which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal–superconductor plane junctions.