Rapid Characterization of Threshold Voltage Fluctuation in MOS Devices
Rapid Characterization of Threshold Voltage Fluctuation in MOS Devices
复制标题
MOS 器件中阈值电压波动的快速表征
DOI：
10.1109/icmts.2007.374458
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
K. Nowka
中科院分区：
文献类型：
--
作者：
K. Agarwal;S. Nassif;F. Liu;J. Hayes;K. Nowka
我们提出了一种快速表征MOS器件随机阈值电压变化的技术。我们的Vtau散射表征方法通过监测固定漏极电流IDS和漏极-源极电压VDS的栅-源电压VGS的变化来测量阈值电压偏移。我们测量VGS的变化安排在一个单独可寻址的阵列和报告的Vtau散射测量结果从测试芯片在65 nm SOI CMOS工艺的一个大的一组设备。我们还测量和报告的Vtau波动引起的本地器件电流失配的幅度。
We present a technique for fast characterization of random threshold voltage variation in MOS devices. Our Vtau scatter characterization method measures threshold voltage shift by monitoring the change in gate-to-source voltage VGS for a fixed drain current IDs and drain-to-source voltage VDS. We measure VGS variation for a large set of devices arranged in an individually addressable array and report results of Vtau scatter measurement from a test chip in a 65 nm SOI CMOS process. We also measure and report the magnitude of local device current mismatch caused by the Vtau fluctuation.