Evolution of electric field amplitude dependent scaling behaviors in ferroelectric films over a broad temperature range
Evolution of electric field amplitude dependent scaling behaviors in ferroelectric films over a broad temperature range
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DOI：
10.1063/1.2978329
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发表时间：
2008-09
影响因子：
4
通讯作者：
Jing Yang;Xiangjian Meng;M. Shen;C. Gao;J. L. Sun;J. Chu
中科院分区：
文献类型：
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作者：
Jing Yang;Xiangjian Meng;M. Shen;C. Gao;J. L. Sun;J. Chu
分析了掺锰钛酸铅薄膜中动态磁滞面积随温度变化的电场幅度(V0)相关标度(A∝V0α)随温度的变化规律。α在三个温区表现出不同的值，其中(1)本征铁电畴的成核、生长和反转，(2)极性纳米区域与可移动缺陷之间的竞争，以及(3)氧空位长程移动过程中的焦耳损失。这一研究为区分本征铁电磁滞和人为铁电磁滞提供了一个定量的判据。
The evolution of the electric field amplitude (V0) dependent scaling of dynamic hysteresis area (A∝V0α) with the temperature in Mn doped (Pb,Sr)TiO3 film was analyzed. α exhibited different values under three temperature regions, where (1) the intrinsic ferroelectric domain nucleation, growth, and reversal, (2) the competition between the polar nanoregions and mobile defects, and (3) the Joule loss during long range movement of oxygen vacancies were demonstrated. This study provides a quantitative criterion to distinguish the intrinsic ferroelectric hysteresis from artificial one.