Formation of highly aligned ZnO tubes on sapphire (0001) substrates
Formation of highly aligned ZnO tubes on sapphire (0001) substrates
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DOI：
10.1063/1.1753061
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发表时间：
2004-05-17
影响因子：
4
通讯作者：
Koinuma, H
中科院分区：
文献类型：
--
作者：
Zhang, BP;Binh, NT;Koinuma, H
采用金属有机物化学气相沉积法在蓝宝石（0001）衬底上外延生长了ZnO纳米管。管生长沿着基板正常，其特征在于由六边形的横截面。所有的管相对于衬底具有相同的外延关系。反应器压力和生长温度被发现在ZnO管的形成中起着重要的作用。螺旋柱生长模式被认为是负责形成的ZnO管。(C)2004年，美国物理学会。
ZnO tubes were epitaxially grown on sapphire (0001) substrates by metalorganic chemical vapor deposition. The tubes grew along the substrate normal and were characterized by hexagon-shaped cross sections. All of the tubes possessed the same epitaxial relationships with respect to the substrate. Both reactor pressure and growth temperature were found to play an important role in the formation of ZnO tubes. Spiral column growth mode was found to be responsible for the formation of ZnO tubes. (C) 2004 American Institute of Physics.