Radical-Driven Silicon Surface Passivation by Benzoquinone– and Hydroquinone–Methanol and Photoinitiators
Radical-Driven Silicon Surface Passivation by Benzoquinone– and Hydroquinone–Methanol and Photoinitiators
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DOI:
10.1021/acs.jpcc.7b05686
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发表时间:
2017-09
影响因子:
3.7
通讯作者:
Meixi Chen;James H. Hack;Abhishek Iyer;K. Jones;R. Opila
中科院分区:
文献类型:
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作者:
Meixi Chen;James H. Hack;Abhishek Iyer;K. Jones;R. Opila
This work confirms that radical intermediates are the reactive species in quinhydrone/methanol (QHY/ME) passivation on silicon surfaces. The two constituent parts, p-benzoquinone (BQ) and hydroquinone (HQ), have been studied separately. BQ abstracts the hydrogen atom from methanol to become semiquinone radicals (QH*). Both QH* and the resulting methanol radical are responsible for the large, instantaneous increase in minority carrier lifetime in BQ/ME, obtaining the lowest surface recombination velocity of 1.6 cm/s. HQ releases a hydrogen atom to become QH*. The quinone derivatives containing a lower electronegativity group (Cl— or O═) on the benzene ring form radicals more easily, and give better passivation results. This radical-driven passivation mechanism is also valid on other radical sources. X-ray photoelectron spectroscopy (XPS) supports the radical mechanism in the observation of dominating BQ bonding after 1 h of BQ/ME treatment, and increasing methanol bonding with increasing immersion time, re...