External magnetic field distribution mapping using terahertz emission from indium antimonide
External magnetic field distribution mapping using terahertz emission from indium antimonide
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DOI：
10.7567/jjap.56.028001
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发表时间：
2017-01
影响因子：
1.5
通讯作者：
V. Mag-usara;D. Bulgarevich;M. Shiwa;M. Watanabe;M. Tani
中科院分区：
文献类型：
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作者：
V. Mag-usara;D. Bulgarevich;M. Shiwa;M. Watanabe;M. Tani
我们证明并报告了利用半导体的太赫兹（THz）表面发射作为磁场分布映射工具的可行性。利用标准的太赫兹时域光谱装置，系统地测量了锑化铟（InSb）在外磁场的几个不同点上的太赫兹辐射。初步结果表明，开发一种实用的、基于太赫兹发射的、用于非破坏性电磁成像的磁场测绘技术是有希望的方向。
We demonstrate and report the feasibility of utilizing terahertz (THz) surface emission from semiconductors as a mapping tool for magnetic field distribution. Using a standard THz time-domain spectroscopy setup, the THz emission of indium antimonide (InSb) was systematically measured at several different points of an external magnetic field. The initial results suggest promising directions in developing a practical THz emission-based magnetic field mapping technique for non-destructive electromagnetic imaging applications.