Ion-Induced Nanoscale Ripple Patterns on Si Surfaces: Theory and Experiment.
Ion-Induced Nanoscale Ripple Patterns on Si Surfaces: Theory and Experiment.
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DOI：
10.3390/ma3104811
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发表时间：
2010-10-22
期刊：
影响因子：
--
通讯作者：
Facsko S
中科院分区：
文献类型：
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作者：
Keller A;Facsko S
近年来，通过低能离子轰击对固体表面进行纳米图案化引起了人们极大的兴趣。这种兴趣部分源于纳米图案基材在功能表面生产中的有前景的应用。特别是硅表面上的纳米级波纹图案从基础和应用相关的角度都引起了人们的关注。本文总结了离子诱导图案形成的理论基础，并将各种连续介质模型的预测与实验观察进行了比较，特别强调了亚 keV 离子溅射过程中硅表面的形态发展。
Nanopatterning of solid surfaces by low-energy ion bombardment has received considerable interest in recent years. This interest was partially motivated by promising applications of nanopatterned substrates in the production of functional surfaces. Especially nanoscale ripple patterns on Si surfaces have attracted attention both from a fundamental and an application related point of view. This paper summarizes the theoretical basics of ion-induced pattern formation and compares the predictions of various continuum models to experimental observations with special emphasis on the morphology development of Si surfaces during sub-keV ion sputtering.