Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors
Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors
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DOI：
10.1109/tps.2013.2249113
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发表时间：
2013-03
影响因子：
1.5
通讯作者：
V. Chaplin;P. Bellan
中科院分区：
文献类型：
--
作者：
V. Chaplin;P. Bellan
本文介绍了一种用于等离子体物理实验和其它脉冲功率应用的低成本、易实现的点火管触发电路。该电路采用绝缘栅双极晶体管（IGBT）实现快速开关，从0.1 μF电容向点火管触发引脚提供大于2的峰值电流，上升时间约为0.6 μs。触发电路通过脉冲Transformer与点火管隔离。详细的电路设计和实际考虑与IGBT的工作进行了讨论。系统中的电感源被识别，与脉冲Transformer的漏电感被证明是限制脉冲上升时间的主要因素。
This paper describes a low cost, easy-to-implement circuit for triggering ignitrons in plasma physics experiments and other pulsed power applications. Using insulated gate bipolar transistors (IGBTs) for rapid switching, the circuit delivers >2 peak current from a 0.1-μF capacitor to the ignitron trigger pin with a rise time of ~ 0.6 μs. The trigger circuit is isolated from the ignitron by a pulse transformer. Details of the circuit design and practical considerations for working with IGBTs are discussed. Sources of inductance in the system are identified, and leakage inductance associated with the pulse transformer is shown to be the primary factor limiting the pulse rise time.