Palladium-Decorated Silicon Nanomesh Fabricated by Nanosphere Lithography for High Performance, Room Temperature Hydrogen Sensing
Palladium-Decorated Silicon Nanomesh Fabricated by Nanosphere Lithography for High Performance, Room Temperature Hydrogen Sensing
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DOI：
10.1002/smll.201703691
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发表时间：
2018-03-08
期刊：
影响因子：
13.3
通讯作者：
Park, Inkyu
中科院分区：
文献类型：
--
作者：
Gao, Min;Cho, Minkyu;Park, Inkyu
采用聚苯乙烯纳米球光刻和自顶向下工艺制备了一种基于钯纳米粒子修饰的硅（Si）纳米网结构的氢（H-2）气体传感器。与没有纳米图案的硅薄膜传感器相比，该气体传感器的H-2气体灵敏度显著提高。此外，硅纳米网结构的缓冲氧化物蚀刻处理导致了额外的性能改进。该传感装置对H-2的响应速度快，对H-2气体的选择性高。在干燥和高湿环境下，传感性能稳定，可重复响应。该传感器也显示出高稳定性，一个月后没有明显的性能下降。这种方法可以通过成本效益高、互补金属氧化物半导体（CMOS）兼容、可扩展的纳米图像化方法，轻松制造高性能的H-2传感器。
A hydrogen (H-2) gas sensor based on a silicon (Si) nanomesh structure decorated with palladium (Pd) nanoparticles is fabricated via polystyrene nanosphere lithography and top-down fabrication processes. The gas sensor shows dramatically improved H-2 gas sensitivity compared with an Si thin film sensor without nanopatterns. Furthermore, a buffered oxide etchant treatment of the Si nanomesh structure results in an additional performance improvement. The final sensor device shows fast H-2 response and high selectivity to H-2 gas among other gases. The sensing performance is stable and shows repeatable responses in both dry and high humidity ambient environments. The sensor also shows high stability without noticeable performance degradation after one month. This approach allows the facile fabrication of high performance H-2 sensors via a cost-effective, complementary metal-oxide-semiconductor (CMOS) compatible, and scalable nanopatterning method.