Germanium pn junctions between ferromagnetic CoFe and Fe3Si layers for spintronic applications
Germanium pn junctions between ferromagnetic CoFe and Fe3Si layers for spintronic applications
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用于自旋电子应用的铁磁 CoFe 和 Fe3Si 层之间的锗 pn 结
DOI：
10.1016/j.mssp.2020.105066
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发表时间：
2020
影响因子：
4.1
通讯作者：
Kohei Hamaya
中科院分区：
文献类型：
--
作者：
Mizuki Honda;Takahiro Shiihara;Michihiro Yamada;Shinya Yamada;Kohei Hamaya
我们展示了锗（Ge） pn结之间的铁磁合金，CoFe和Fe3Si，在Si（111）上垂直堆叠自旋阀器件。利用低温分子束外延技术，可以生长出具有自旋阀式磁化反转过程的均匀、全外延的CoFe/未掺杂Ge/ sb掺杂Ge/Fe3Si层结构。小尺寸垂直CoFe/未掺杂Ge/ sb掺杂Ge/Fe3Si器件的电流电压特性即使在室温下也表现出明显的整流行为，显示出pn二极管。我们讨论了实现基于锗的垂直自旋电子器件的未来课题。
We demonstrate germanium (Ge) pn junctions between ferromagnetic alloys, CoFe and Fe3Si, on Si(111) for vertically stacked spin-valve devices. Uniform and all-epitaxial CoFe/undoped Ge/Sb-doped Ge/Fe3Si layer structures with a spin-valve like magnetization reversal process can be grown by using a low-temperature molecular beam epitaxy technique. Current-voltage characteristics of the small-sized vertical CoFe/undoped Ge/Sb-doped Ge/Fe3Si devices show evident rectifying behavior, indicating pn diode, even at room temperature. We discuss future subjects for achieving Ge-based vertical spintronic devices.