Toward Clean and Crackless Transfer of Graphene
Toward Clean and Crackless Transfer of Graphene
复制标题
实现石墨烯的清洁和无裂纹转移
DOI：
10.1021/nn203377t
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发表时间：
2011-11-01
期刊：
影响因子：
17.1
通讯作者：
Richter, Curt A.
中科院分区：
文献类型：
--
作者：
Liang, Xuelei;Sperling, Brent A.;Richter, Curt A.
我们提出了一个彻底的研究结果的湿化学方法转移化学气相沉积生长的石墨烯从金属生长基板的设备兼容的基板。在这些结果的基础上，我们开发了一种“改良的RCA清洁”转移方法，该方法对污染和裂纹形成都具有更好的控制，并且不会降低转移的石墨烯的质量。使用这种转移方法，实现了高达97%的高器件产率，以及窄的器件性能指标分布。该演示向大规模石墨烯电子器件应用迈出了重要一步。
We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step toward large-scale graphene-based electronic device applications.