Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure
Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure
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DOI：
10.1109/68.766767
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发表时间：
1999-06
影响因子：
2.6
通讯作者：
A. Neogi;T. Mozume;H. Yoshida;O. Wada
中科院分区：
文献类型：
--
作者：
A. Neogi;T. Mozume;H. Yoshida;O. Wada
我们首次在与InP衬底匹配的InGaAs-AlAsSb双量子阱结构中观测到了1.3 μ/m的子带间吸收。由于相邻威尔斯阱的子带间态的强耦合，该新结构在1.3和1.55 /spl μ/m处同时表现出子带间跃迁。对所设计结构的多级传导子带态的光响应进行了瞬态分析，结果表明该结构具有亚皮秒响应的超快光开关行为。
We report the first observation of intersubband absorption at 1.3 /spl mu/m in a coupled InGaAs-AlAsSb double-quantum-well structure lattice matched to InP substrate. The novel structure exhibits intersubband transitions concurrently at 1.3 and 1.55 /spl mu/m due to the strong coupling of the intersubband states of the adjacent wells. A transient analysis of optical response in the multilevel conduction subband states for the designed structure indicates ultrafast optical switching behavior with a subpicosecond response.