Selective control of electron and hole tunneling in 2D assembly.
Selective control of electron and hole tunneling in 2D assembly.
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DOI：
10.1126/sciadv.1602726
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发表时间：
2017-04
期刊：
影响因子：
13.6
通讯作者：
Kim EK
中科院分区：
文献类型：
--
作者：
Chu D;Lee YH;Kim EK
介绍了一种由具有超高通断比和整流比的载流子控制的新型三极管(即“晶闸管”)。最近在二维(2D)材料领域的发现导致了奇异装置的展示。尽管它们在电子学中有新的潜在应用，但金属/半导体势垒上的热激活输运限制了物理亚热离子。实现利用这一担忧的创新晶体管几何结构的挑战仍然存在。本文介绍了一种新的结构类似于金属-绝缘体-半导体结构的二维组件(即“晶闸管”)。优越的功能，如电流整流比高达40万，开关比在室温下高于106，通过大多数和少数载流子的量子力学隧道穿越势垒来实现。这些晶闸管作为低功耗电子产品的基本构件具有潜在的应用前景。
A novel triode device controlled by a carrier type (namely, “carristor”) with ultrahigh on/off and rectification ratios is introduced. Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, “carristor”) with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 106 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low–power consumption electronics.