Effects of AsH3 Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction
Effects of AsH3 Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction
复制标题
AsH3 表面处理对超浅区选择性再生 GaAs 侧壁隧道结改善的影响
DOI：
10.1149/1.1639023
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发表时间：
2004
影响因子：
3.9
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
Y. Oyama;T. Ohno;K. Suto;J. Nishizawa
研究了再生长前的AsH3表面处理对超浅(49 Nm)p+n+GaAs侧壁隧道结特性的影响。制作的隧道结显示了极高的峰值电流密度，达到37000A cm-2，在再生之前进行的表面处理显示，谷电流大大减少了4倍，峰谷电流比改善了2.6倍。从表面化学计量比的控制和相关的界面现象出发，探讨了ASH3表面处理效果的机理。
Effects of AsH 3 surface treatment just prior to regrowth on ultrashallow (49 nm) p + n + GaAs sidewall tunnel junction characteristics were investigated. Fabricated tunnel junctions have shown extremely high record peak current density of 37,000 A cm -2 , and the surface treatment just prior to regrowth has shown great reduction of the valley current by a factor of 4 and the improvement in peak-to-valley current ratio has been achieved by a factor of 2.6. Mechanism of the AsH 3 surface treatment effects are discussed in view of the control of surface stoichiometry and related interface phenomena.