Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy
Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy
复制标题
DOI：
10.1016/j.mssp.2016.10.027
复制
发表时间：
2017-11
影响因子：
4.1
通讯作者：
A. Terano;Hiroyoshi Imadate;K. Shiojima
中科院分区：
文献类型：
--
作者：
A. Terano;Hiroyoshi Imadate;K. Shiojima
在这项研究中，我们使用扫描内部光电子显微镜（SIPM）的n-GaN表面上，这是由电感耦合等离子体（ICP）蚀刻结合退火的恢复过程中引起的损伤进行调查。我们在包括选择性ICP蚀刻区域的n-GaN表面上形成Pd肖特基电极，并进行光产率（Y）的二维映射。与SIPM，我们可以清楚地看到蚀刻区域的Y地图，其中Y增加了1.4倍，肖特基势垒高度（q B）下降了0.32 eV，与未蚀刻的区域相比。在700 °C和800 °C下退火后，Y1和Q2 B值均恢复。当退火温度提高到900 °C时，刻蚀区和未刻蚀区的Y值都显著降低，Y图中的刻蚀图形消失。这些结果表明，SIPM是有效的映射蚀刻损伤和恢复过程具有高灵敏度。
In this study, we used scanning internal photoemission microscopy (SIPM) to investigate damage on the n-GaN surface, which were induced by inductive coupled plasma (ICP) etching in conjunction with a recovery process by annealing. We formed Pd Schottky electrodes on n-GaN surfaces including selectively ICP-etched regions, and conducted two-dimensional mapping of the photoyield (Y). With SIPM, we could clearly visualize the etched regions in theYmap, whereYincreased 1.4 times and the Schottky barrier height (qϕB) decreased by 0.32 eV, as compared with unetched regions. Upon annealing at 700 °C and 800 °C, bothYandqϕBvalues recovered. When we increased the annealing temperature to 900 °C,Ydecreased remarkably in the both etched and unetched regions, and the etching patterns in theYmaps disappeared. These results indicate that SIPM is effective for mapping etching damage and recovery processes with high sensitivity.