Direct measurement of piezoelectric properties of Sol-Gel PZT films
Direct measurement of piezoelectric properties of Sol-Gel PZT films
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直接测量溶胶-凝胶 PZT 薄膜的压电性能
DOI：
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发表时间：
1998
影响因子：
0.6
通讯作者：
M. Elwenspoek
中科院分区：
文献类型：
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作者：
J. Gardeniers;A.G.B.J. Verholen;N. Tas;M. Elwenspoek
采用溶胶-凝胶法在Si-SiO2-Ta-Pt衬底上制备了PbZr0.53Ti0.47O3薄膜。薄膜的电学性能为：电阻率约为100%。5 × 1011 Ωcm，相对介电常数900-1100，剩余极化度约为0.5 × 1011 Ω cm。20 μC/cm ~ 2，击穿电场大于50 MV/m。用外差马赫-曾德尔干涉仪测量了SiO_2-Ta-Pt-PZT-Al复盖的压电激励硅悬臂梁的偏转振幅。PZT膜的压电应变常数d31由在远低于第一机械共振的频率下测量的振幅确定（准静态方法）。d31常数也由第一机械共振时的偏转振幅和悬臂梁的品质因数确定。测量值的范围从未极化膜的-30 pC/N到在室温和40 MV/m下极化的膜的-160 pC/N。
PbZr0.53Ti0.47O3 films were deposited on Si-SiO2-Ta-Pt substrates via a conventional sol-gel procedure. Electrical properties of the films were: resistivity ca. 5 × 1011 Ωcm, relative dielectric permittivity 900-1100, remnant polarization ca. 20 μC/cm2, breakdown electric field larger than 50 MV/m. The deflection amplitude of piezoelectrically excited Si cantilevers, covered with SiO2-Ta-Pt-PZT-Al, was determined with the aid of a heterodyne Mach-Zehnder interferometer. The piezoelectric strain constant d31 of the PZT films was determined from the amplitude measured at frequencies far below the first mechanical resonance (quasi-static method). The d31 constant was also determined from the deflection amplitude at the first mechanical resonance and the quality factor of the cantilever. Measured values ranged from -30 pC/N for unpoled films to -160 pC/N for films poled at room temperature and 40 MV/m.