Studies of Recrystallization of CdTe Thin Films After CdCl Treatment
Studies of Recrystallization of CdTe Thin Films After CdCl Treatment
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CdCl处理后CdTe薄膜再结晶的研究
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
L. Kazmerski
中科院分区：
文献类型：
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作者：
H. Moutinho;M. Al‐Jassim;D. Levi;P. Dippo;R. Dhere;L. Kazmerski
用CdCl 2在350° C和400°C对物理气相沉积（PVD）和近空间升华（CSS）沉积的CdTe薄膜进行了处理。原子力显微镜（AFM）分析表明，在350°C CdCl 2处理过程中，薄膜开始重结晶。这些结果通过在X射线衍射（XRD）分析中检测到的两个晶格参数的存在来证实。在400°C下处理的PVD膜完全再结晶并且观察到晶粒生长。在这些薄膜中的Cd（S1-xTex）合金的形成被证明的外观额外的峰接近的CdTe峰的衍射图案。在相同条件下处理的CSS CdTe薄膜的结构特性没有观察到重大变化。它的结论是，在CdTe薄膜中的氯化镉2处理的效果是促进再结晶和晶粒生长，但只有当足够的晶格应变能是可用的（如PVD膜的情况下）。时间分辨光致发光（TRPL）分析表明，对于PVD和CSS薄膜，少数载流子寿命随着处理而增加，主要是在400°C下，可能是由于消除了带隙内的深能级。
CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl 2 at 350° and 400°C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350°C CdCl 2 treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400°C were completely recrystallized and grain growth was observed. The formation of Cd(S 1-x Te x ) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl 2 treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400°C, probably due to elimination of deep levels within the band gap.