Self-Limiting Growth of Hexagonal and Triangular Quantum Dots on (111)A
Self-Limiting Growth of Hexagonal and Triangular Quantum Dots on (111)A
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DOI：
10.1021/cg201513m
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发表时间：
2012-03-01
影响因子：
3.8
通讯作者：
Sakoda, Kazuaki
中科院分区：
文献类型：
--
作者：
Jo, Masafumi;Mano, Takaaki;Sakoda, Kazuaki
本文报道了用液滴外延法在（111）A衬底上生长三角形GaAs量子点。随着晶化温度的升高，量子点的形状从六边形向三角形转变，这是由于在（111）A衬底上台阶边的生长速率不同所致。尺寸统计说明了GaAs量子点的自限性生长，其特征尺寸由Ga液滴的尺寸决定。详细的结构分析进一步揭示了量子点的三维结构。通过减少Ga的量，获得低密度GaAs量子点，同时保持三角形形状，这允许在单个量子点A水平上研究光学性质。
We report the formation of triangular GaAs quantum dots (Qns) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature, as a result of different growth rates of step edges on a (111)A substrate. Size statistics illustrate the self-limiting growth of GaAs QDs whose characteristic size is determined by that of Ga droplets. Detailed structural analysis further reveals the three-dimensional structure of QDs. By decreasing the amount of Ga, low-density GaAs QDs are obtained while retaining the triangular shape, which allows the optical properties to be studied at a single QD A level.