Composition of SiCN crystals consisting of a predominantly carbon-nitride network
Composition of SiCN crystals consisting of a predominantly carbon-nitride network
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DOI：
10.1557/jmr.1997.0045
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发表时间：
1997-02
影响因子：
2.7
通讯作者：
D. Bhusari;C. K. Chen;K. H. Chen;T. Chuang;L. Chen;M. Lin
中科院分区：
文献类型：
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作者：
D. Bhusari;C. K. Chen;K. H. Chen;T. Chuang;L. Chen;M. Lin
我们在这里报告的合成大晶体的含硅的氮化碳，主要由C-N网络，通过微波CVD。该材料中的Si含量随晶体和沉积条件而变化，并且已经观察到低至小于5at.%在一些晶体中，其中Si原子被认为仅取代一些C位点。这是第一次合成出几乎完全由碳氮化物网络组成的如此大的、有良好刻面的晶体。此外，没有明显的非晶CN材料的沉积。
We report here on the synthesis of large crystals of Si-containing carbon nitride, consisting of a predominantly C–N network, by microwave CVD. The Si content in this material varies from crystal to crystal and also with the deposition conditions and has been observed to be as low as less than 5 at.% in some crystals, wherein the Si atoms are believed to substitute for some of the C sites only. This is the first time that such large and well-faceted crystals consisting almost entirely of carbon-nitride network have been synthesized. Moreover, there is no obvious deposition of amorphous CN material.