Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals
Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals
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DOI：
10.1557/jmr.2008.0300
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发表时间：
2008-09
影响因子：
2.7
通讯作者：
T. Ohgaki;N. Ohashi;Shigeaki Sugimura;Haruki Ryoken;I. Sakaguchi;Y. Adachi;H. Haneda
中科院分区：
文献类型：
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作者：
T. Ohgaki;N. Ohashi;Shigeaki Sugimura;Haruki Ryoken;I. Sakaguchi;Y. Adachi;H. Haneda
我们报告样品的非均匀性对霍尔效应测量结果的影响。从明显的n型ZnO单晶获得假正霍尔系数，尽管制作了具有低接触电阻的四个电极并且该电极配置的货车范德堡参数接近1.00。进一步的位置敏感特性表明，假阳性霍尔系数是由于不均匀的样品的电性能。为了证明由于样品不均匀性导致的霍尔系数的假阳性信号，我们设计了由明显的n型ZnO薄膜制成的模型结构，并成功地从n型ZnO再现了假阳性霍尔系数。
We report on the effect of sample non-uniformity on the results of Hall-effect measurements. False positive Hall coefficients were obtained from an evidently n -type ZnO single crystal, although four electrodes with low contact resistance were made and the Van der Pauw parameter for this electrode configuration was close to 1.00. Further position-sensitive characterization revealed that the false positive Hall coefficient was due to non-uniform electrical properties of the sample. To demonstrate a false positive sign of the Hall coefficient due to sample non-uniformity, we devised a model structure made from evident n -type ZnO thin film and successfully reproduced a false positive Hall coefficient from n -type ZnO.