Improved passivation of the ZnO/Si interface by pulsed laser deposition
Improved passivation of the ZnO/Si interface by pulsed laser deposition
复制标题
通过脉冲激光沉积改善 ZnO/Si 界面的钝化
DOI：
10.1063/1.4788675
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发表时间：
2013
影响因子：
3.2
通讯作者：
J. Rappich
中科院分区：
文献类型：
--
作者：
M. Gluba;N. Nickel;K. Hinrichs;J. Rappich
采用磁控溅射和脉冲激光沉积在晶体硅上生长氧化锌薄膜。使用扫描电子显微镜、拉曼背散射、光致发光和红外光谱椭圆光度法研究了体积和界面特性。溅射沉积的 ZnO 样品显示出很大程度的无序性和约 1012 cm−2 的界面缺陷密度。在通过脉冲激光沉积生长的样品中观察到结构质量的显着改善。当在沉积过程中引入单原子氧时，体缺陷密度进一步降低。同时，ZnO/Si 界面处的缺陷密度降低了约五分之一。讨论了对含有 ZnO/Si 界面的器件的影响。
Zinc oxide thin-films were grown on crystalline silicon employing magnetron sputtering and pulsed laser deposition. Bulk and interface properties were investigated using scanning electron microscopy, Raman backscattering, photoluminescence, and infrared spectroscopic ellipsometry. Sputter deposited ZnO samples reveal a large degree of disorder and an interface defect density of ≈1012 cm−2. A significant improvement of the structural quality is observed in samples grown by pulsed laser deposition. The bulk defect density is further reduced, when introducing monatomic oxygen during deposition. Simultaneously, the defect density at the ZnO/Si interface decreases by about a factor of five. Implications for devices containing ZnO/Si interfaces are discussed.