Low-Leakage Epitaxial PZT Thin Films Grown on Ir/MgO Substrates by Metalorganic Chemical Vapor Deposition
Low-Leakage Epitaxial PZT Thin Films Grown on Ir/MgO Substrates by Metalorganic Chemical Vapor Deposition
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通过金属有机化学气相沉积在 Ir/MgO 衬底上生长低漏电外延 PZT 薄膜
DOI：
10.1080/10584580215390
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发表时间：
2002
影响因子：
0.7
通讯作者：
H. Funakubo
中科院分区：
文献类型：
--
作者：
T. Oikawa;K. Takahashi;J. Ishida;Y. Ichikawa;T. Ochiai;K. Saito;A. Sawabe;H. Funakubo
采用金属有机化学气相沉积(MOCVD)方法在(001)Lr/(001)MgO衬底上生长了250 nm厚的PZT薄膜。结果表明，在LR衬底上外延生长的PZT薄膜没有形成大量的LRO2相。比较了相同比例为0.5 0的PZT/(0.0 1)Lr/(0.0 1)MgO结构和Pt/PZT/(0.0 1)c SrRuO3/(0.0 1)SrTiO3结构的晶体结构和电学性能。X-射线衍射图显示为(001)和(100)取向的四方PZT相。剩余极化(Pr)和矫顽场(Ec)的P-E磁滞回线和饱和特性也是相同的，这是因为对极化有贡献的(001)取向颗粒的体积分数相同。另一方面，Pt/PZT/LR/MgO结构的漏电流密度明显优于Pt/PZT/SrRuO3/SrTiO3结构。因此，Lr/MgO衬底适合制作低漏、铁电性好的PZT外延薄膜。
250 nm-thick PZT films were grown on (001)lr/(001)MgO substrates by metalorganic chemical vapor deposition (MOCVD). It was ascertained that PZT films on lr substrates are epitaxially grown without the formation of large amount of lrO 2 phase. Crystal structure and the electrical properties of Pt/PZT/(001)lr/(001)MgO structure was compared with Pt/PZT/ (001)c SrRuO 3 /(001)SrTiO 3 structure with the same Zr/(Zr+Ti) ratio of 0.50. X-ray diffraction pattern was almost the same to be identified as (001)- and (100)-oriented tetragonal PZT phase. P-E hysteresis loops and saturation properties of the remanent polarization ( P r ) and the coercive field ( E c ) were also the same, because of the same volume fraction of (001)-oriented grains that contributed to polarization. On the other hand, the leakage current density of Pt/PZT/lr/MgO structure was superior to that of Pt/PZT/SrRuO 3 /SrTiO 3 structure. As a result, lr/MgO substrate is suitable for epitaxial PZT film with low-leakage and good ferroelectricity.