Fast and accurate thermal modeling and optimization for monolithic 3D ICs
Fast and accurate thermal modeling and optimization for monolithic 3D ICs
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快速准确的单片 3D IC 热建模和优化
DOI：
10.1145/2593069.2593140
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
S. Lim
中科院分区：
文献类型：
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作者：
S. Samal;Shreepad Panth;K. Samadi;Mehdi Saedi;Yang Du;S. Lim
在本文中，我们对单片三维集成电路中独特的热行为进行了全面的研究。特别地，我们研究了器件层间薄层介电层（ILD）对垂直热耦合的影响。此外，我们还开发了一种基于非线性回归技术的快速准确的紧凑全芯片热分析模型。我们的模型速度非常快，精度很高，误差小于5%。该模型被整合到一个热感知的3d地板规划器中，在运行时没有明显的开销。我们观察到最高温度降低了22%，而面积和性能开销微不足道。
In this paper, we present a comprehensive study of the unique thermal behavior in monolithic 3D ICs. In particular, we study the impact of the thin inter-layer dielectric (ILD) between the device tiers on vertical thermal coupling. In addition, we develop a fast and accurate compact full-chip thermal analysis model based on non-linear regression technique. Our model is extremely fast and highly accurate with an error of less than 5%. This model is incorporated into a thermal-aware 3D-floorplanner that runs without significant runtime overhead. We observe up to 22% reduction in the maximum temperature with insignificant area and performance overhead.