Electron temperature in electrically isolated Si double quantum dots
Electron temperature in electrically isolated Si double quantum dots
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DOI：
10.1063/1.3697832
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发表时间：
2012-03-26
影响因子：
4
通讯作者：
Williams, D. A.
中科院分区：
文献类型：
--
作者：
Rossi, A.;Ferrus, T.;Williams, D. A.
在无铅量子系统中，通过对单电子的可靠控制可以实现基于电荷的量子计算。在掺磷硅中实现的电隔离双量子点(DQD)中的单电荷跃迁可以通过电容耦合的单电子隧道器件来检测。通过探测器电导的时间分辨测量，我们研究了这些点在温度中的占有率统计。我们观察到，与探测器引线中的温度相比，DQD中的有效电子温度显著降低。这使得孤立的DQD成为适合长相干量子计算的平台。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.3697832]
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697832]