Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs
Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs
复制标题
入射角对 65 nm Bulk 和 FDSOI SRAM 的负 μ 子诱导 SEU 横截面的影响
DOI：
10.1109/tns.2020.2976125
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发表时间：
2020
影响因子：
1.8
通讯作者：
Miyake Yasuhiro
中科院分区：
文献类型：
--
作者：
Liao Wang;Hashimoto Masanori;Manabe Seiya;Watanabe Yukinobu;Abe Shin-ichiro;Tampo Motonobu;Takeshita Soshi;Miyake Yasuhiro
μ子引起的单粒子翻转（SEU）预计将增加与技术缩放。虽然以前的工作调查的依赖性的μ子诱导单粒子翻转截面的能量，电压和技术，地面μ子的入射角并不总是垂直于芯片表面。因此，应评估μ介子入射角对单粒子翻转的影响。本研究以0°（垂直）和45°（倾斜）两种入射角对体硅和全耗尽绝缘体硅静态随机存取存储器进行负μ子辐照测试。如预期的那样，倾斜入射使μ子能量峰漂移到更高的能量。然而，尽管在0.4V的操作电压下对SEU横截面有意外的影响，但是在垂直入射和倾斜入射之间的体器件中的SEU特性（包括SEU横截面和多个单元翻转图案的电压依赖性）是相似的。
Muon-induced single event upset (SEU) is predicted to increase with technology scaling. Although previous works investigated the dependencies of muon-induced SEU cross sections on energy, voltage, and technology, the angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk and fully depleted silicon on insulator static random access memories at two angles of incidence: 0° (vertical) and 45° (tilted). The tilted incidence drifts the muon energy peak to a higher energy as expected. However, the SEU characteristics in the bulk device between the vertical and tilted incidences, including the voltage dependences of the SEU cross sections and multiple cells upset patterns, are similar despite the unexpected impact on the SEU cross section at an operating voltage of 0.4 V.