Post-growth surface smoothing of thin films of diindenoperylene
Post-growth surface smoothing of thin films of diindenoperylene
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DOI：
10.1063/1.4737168
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发表时间：
2012-07
影响因子：
4
通讯作者：
A. Hinderhofer;T. Hosokai;K. Yonezawa;A. Gerlach;Kengo Kato;K. Broch;C. Frank;J. Novák;S. Kera;N. Ueno;F. Schreiber
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文献类型：
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作者：
A. Hinderhofer;T. Hosokai;K. Yonezawa;A. Gerlach;Kengo Kato;K. Broch;C. Frank;J. Novák;S. Kera;N. Ueno;F. Schreiber
我们应用原位 X 射线反射率和紫外光电子能谱研究了退火对 SiO2 和氧化铟锡 (ITO) 上二茚并苝 (DIP) 低温 (200 K) 沉积有机薄膜的影响。在 200 K 时，DIP 在 SiO2 上为结晶，在 ITO 上为非晶。加热至室温后，两种基板上的 DIP 粗糙度均降低，从 1.5 nm 降低至 0.75 nm (SiO2)，从 0.90 nm 降低至 0.45 nm (ITO)。平滑化伴随着表面分子的结晶，而薄膜的整体结构没有强烈重组。
We applied in situ x-ray reflectivity and ultraviolet photoelectron spectroscopy to study the impact of annealing on low temperature (200 K) deposited organic thin films of diindenoperylene (DIP) on SiO2 and indium tin oxide (ITO). At 200 K, DIP is crystalline on SiO2 and amorphous on ITO. Upon heating to room temperature, the roughness of DIP is reduced on both substrates, from 1.5 nm to 0.75 nm (SiO2) and from 0.90 nm to 0.45 nm (ITO). The smoothing is accompanied by crystallization of the surface molecules, whereas the bulk structure of the films does not strongly reorganize.