Thiadiazole-fused Quinoxalineimide as an Electron-deficient Building Block for N-type Organic Semiconductors
Thiadiazole-fused Quinoxalineimide as an Electron-deficient Building Block for N-type Organic Semiconductors
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DOI：
10.1021/acs.orglett.7b01424
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发表时间：
2017-06-16
期刊：
影响因子：
5.2
通讯作者：
Matsumoto, Hidetoshi
中科院分区：
文献类型：
--
作者：
Hasegawa, Tsukasa;Ashizawa, Minoru;Matsumoto, Hidetoshi
设计并合成了一种强电子接受的平面π共轭骨架-噻二唑稠合喹喔啉酰亚胺（TQI）。三个TQI基小分子表现出深最低未占分子轨道（LUMO）水平，这需要空气稳定的n沟道传导（类似于-4.0 eV）。在这些分子中，Hex-TQI-Br表现出空气稳定的n-通道电荷传输，具有0.044 cm（2）V-1 s（-1）的中等迁移率。
A strong electron-accepting planar pi-conjugated framework, thiadiazole-fused quinoxalineimide (TQI), was designed and synthesized. Three TQI-based small molecules exhibit deep lowest-unoccupied molecular orbital (LUMO) levels, which require air stable n-channel conduction (similar to-4.0 eV). Among these molecules, Hex-TQI-Br exhibits air-stable n-channel charge transport with a moderate mobility of 0.044 cm(2) V-1 s(-1).