THz Magneto-photoresponse of an InAs-based quantum point contact in the region of cyclotron resonance
THz Magneto-photoresponse of an InAs-based quantum point contact in the region of cyclotron resonance
复制标题
回旋共振区域中 InAs 基量子点接触的太赫兹磁光响应
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
B. McCombe
中科院分区：
文献类型：
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作者：
M. Pakmehr;V. R. Whiteside;N. Bhandari;R. Newrock;M. Cahay;B. McCombe
我们研究了在电子回旋共振（CR）占主导地位的响应的频率/场区域中的嵌入式量子点接触的InAs量子阱中的2DEG的太赫兹磁光响应。CR附近的光响应表现为2DEG的Shubnikov-de哈斯振荡的振幅的包络，其峰值在CR场附近。当B > 4 T时，观察到明显的量子振荡的自旋劈裂。数据进行了模拟的模型共振载流子加热，并从模拟的载流子密度，CR的有效质量，散射时间和g因子。我们发现一个显着增强的g因子显然是由于交换相互作用。
We have studied the THz magneto-photoresponse of a 2DEG in an InAs quantum well with an embedded Quantum Point Contact in the frequency/field region where electron cyclotron resonance (CR) dominates the response. The photoresponse near CR is manifested as an envelope of the amplitude of the Shubnikov-de Haas oscillations of the 2DEG with a peak near the CR field. Clear spin-splitting of the quantum oscillations is observed for B > 4 T. Data were simulated by a model of resonant carrier heating, and from the simulations the carrier density, the CR effective mass, scattering times and the g-factor were obtained. We find a significantly enhanced g-factor apparently due to exchange interaction.