Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices
Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices
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DOI：
10.1109/iedm.2015.7409827
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发表时间：
2015-12
期刊：
影响因子：
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通讯作者：
Yiming Li;Han-Tung Chang;C. Lai;Pei-Jung Chao;Chieh-Yang Chen
中科院分区：
文献类型：
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作者：
Yiming Li;Han-Tung Chang;C. Lai;Pei-Jung Chao;Chieh-Yang Chen
本文采用全量子力学验证和实验标定的器件模拟方法，研究了工艺变化效应(PVE)、功函数涨落(WKF)和随机掺杂涨落(RDF)对10 nm高K/金属栅绕栅硅纳米线MOSFET器件的影响。小长宽比器件具有较强的RDF抗干扰性，但存在PVE和WKF。
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.